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SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S SILICON BIDIRECTIONAL TRIODE THYRISTOR
* * * * * * * * High current triacs 16 A RMS 70 A Peak Glass Passivated Wafer 200 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) 125 A peak current Compliance to ROHS
DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. ABSOLUTE MAXIMUM RATINGS Value B
VDRM IT(RMS) ITSM IGM TC Tstg TL Notes: 1. 2. 3. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70C derate linearly to 110C case temperature at the rate of 400 mA/C. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. Page 1 of 3 Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak gate current Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds 200
Symbol
Ratings C
300
Unit M
600
D
400
E
500 16 125
S
700
N
800 V A A A C C C
1 -40 to +110 -40 to +125 230
SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S
THERMAL CHARACTERISTICS Symbol
RJC RJA
Ratings
Junction to case thermal resistance Junction to free air thermal resistance
Value
1.9 62.5
Unit
C/W
ELECTRICAL CHARACTERISTICS
TC=25C unless otherwise noted
Symbol
IDRM
Ratings
Repetitive peak offstate current Gate trigger current
Test Condition(s) VD = Rated VDRM, , IG = 0, TC = 110C Vsupply = +12 V, RL = 10 , tp(g) = > 20 s Vsupply = +12 V, RL = 10 , tp(g) = > 20 s Vsupply = -12 V, RL = 10 , tp(g) = > 20 s Vsupply = -12 V, RL = 10 , tp(g) = > 20 s Vsupply = +12 V, RL = 10 , tp(g) = > 20 s Vsupply = +12 V, RL = 10 , tp(g) = > 20 s Vsupply = -12 V, RL = 10 , tp(g) = > 20 s Vsupply = -12 V, RL = 10 , tp(g) = > 20 s Vsupply = +12 V, IG = 0, initiating ITM = 100 mA Vsupply = -12 V, IG = 0, initiating ITM = -100 mA
Min Typ
1.2 12 -19 -16 34 0.8 -0.8 -0.8 0.9 22 -22 1.4 400 100 9
Mx Unit
2 50 -50 -50 2 -2 -2 2 40 mA -40 80 -80 1.7 mA V V/s A/s V/s mA
IGT
mA
VGT
Gate trigger voltage
V
IH
Holding current
IL VTM dv/dt di/dt dv/dt(c)
Latching current Peak on-state voltage Critical rate of rise of off-state voltage Critical rate of rise of off-state current Critical rise of communication voltage
Vsupply = +12 V (seeNote5) Vsupply = -12 V (seeNote5) ITM = 22.5 A, IG = 50 mA (see Note4) VDRM = Rated VDRM, IG = 0 TC = 110C VDRM = Rated VDRM, IGT = 50 mA, diG/dt = 50mA/s, TC = 110C VDRM = Rated VDRM, IT = 1.4 IT(RMS) di/dt = 0.5 IT(RMS) /ms, TC = 80C
All voltages are whit respect to Main Terminal 1. Note 4: This parameters must be measured using pulse techniques, tW = 1ms, duty cycle 2 %, voltage-sensing contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch) from de device body. Note 5: The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics : RG = 100, tp(g) = 20 s, tr = 15ns, f = 1 kHz.
Page 2 of 3
SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S
MECHANICAL DATA CASE TO-220
Pin 1 : Pin 2 : Pin 3 :
Main Terminal 1 Main Terminal 2 Gate
Page 3 of 3

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